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| savantic semiconductor product specification silicon pnp power transistors 2SB553 description with t o-220c package complement to type 2sd553 low collector saturation voltage applications high current switching applications power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -7 a t a =25 1.5 p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB553 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -50 v v cesat collector-emitter saturation voltage i c =-4a; i b =-0.4a -0.2 -0.4 v v besat base-emitter saturation voltage i c =-4a; i b =-0.4a -0.9 -1.2 v i cbo collector cut-off current v cb =-70v; i e =0 -30 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-4a ; v ce =-1v 30 c ob collector output capacitance i e =0 ; v cb =-10v; f=1mhz 250 pf f t transition frequency i c =-1a ; v ce =-4v 10 mhz switching times t on turn-on time 0.2 s t s storage time 2.5 s t f fall time i b1 =-i b2 =-0.3a; v cc ? -30v r l =10 @ 0.5 s h fe-1 classifications o y 70-140 120-240 savantic semiconductor product specification 3 silicon pnp power transistors 2SB553 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB553 |
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